2N7002T is an N-channel enhancement mode field-effect transistor. It features low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage and ultra-small surface mount package.
This document provides design specifications for the Fairchild Semiconductor 2N7002T, an N-channel enhancement mode field effect transistor (MOSFET). The device is designed with a SOT-523F ultra-small surface mount package and features low on-resistance, fast switching speed, and lead-free RoHS compliance. Key electrical characteristics include a drain-source breakdown voltage of 60V and a continuous drain current of 115mA.
| Drain-Source Voltage (Vdss) | 60 V |
|---|---|
| Continuous Drain Current (Id) | 115 mA |
| Junction Temperature (Tj) | -55 to +150 °C |
| Total Device Dissipation (Pd) | 200 mW |
Yes, the device is lead-free and RoHS compliant.
The maximum junction temperature rating is 150 °C.