2N7002DW is a dual N-channel enhancement mode field effect transistor, featuring low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage, etc. It is packaged in an ultra-small surface mount package and is lead-free/ROHS compliant.
This document provides design specifications for the Fairchild Semiconductor 2N7002DW, a dual N-Channel Enhancement Mode Field Effect Transistor. Key features include low on-resistance, fast switching speed, and an ultra-small SC70-6 (SOT363) surface mount package.
| Drain-Source Voltage (Vdss) | 60 V |
|---|---|
| Package Type | SC70-6 (SOT363) |
| Junction Temperature Range | -55 to +150 °C |
| Total Device Dissipation (Pp) | 200 mW |
The maximum continuous drain current at 100°C is 73 mA.
The maximum total device dissipation is 200 mW.
The junction and storage temperature range is from -55 to +150 °C.