The 2N7002MTF is a N-Channel Small Signal MOSFET with a maximum on-state resistance of 5.0 ohms, a rated voltage of 60V and a rated current of 200mA. It features lower RDS(on), improved inductive ruggedness, fast switching times, lower input capacitance, extended safe operating area and improved high temperature reliability.
This document is a product datasheet for the Fairchild Semiconductor 2N7002MTF, an N-Channel Small Signal MOSFET. It provides key performance metrics including a drain-to-source breakdown voltage (BVDSS) of 60V, a typical on-state resistance (RDS(on)) of 5.0 Ω, and a maximum continuous drain current (ID) of 200 mA.
| Drain-to-Source Breakdown Voltage (BVDSS) | 60 V |
|---|---|
| On-State Drain-Source Resistance (RDS(on)) | 5.0 Ω |
| Continuous Drain Current (ID) | 200 mA |
| Operating Junction Temperature Range | -55 to +150 ℃ |
Yes, the test uses a pulse width of 250 μs with a duty cycle less than or equal to 2%.
The device operates within a junction temperature range of -55°C to +150°C.