The CMPT6427 is a NPN Silicon Darlington Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain.
The document describes the Central Semiconductor CMPT6427, an NPN Silicon Darlington transistor manufactured using the epitaxial planar process. It is designed for applications requiring extremely high gain and comes in a surface mount SOT-23 package with a marking code of C1V.
The datasheet provides maximum ratings such as a collector-base voltage of 40 V, a collector current of 500 mA, and power dissipation of 350 mW. It also lists electrical characteristics including cutoff currents, breakdown voltages, saturation voltages, and gain values at various test conditions.
| Collector-Base Voltage (VcBO) | 40 V |
|---|---|
| Collector-Emitter Voltage (VCEO) | 40 V |
| Emitter-Base Voltage (VEBO) | 12 V |
| Collector Current (Io) | 500 mA |
| Power Dissipation (Pb) | 350 mW |
| Operating and Storage Junction Temperature | -65 to +150 °C |
The maximum collector current is 500 mA.
The maximum power dissipation is 350 mW.
The maximum collector-emitter voltage is 40 V.