The CENTRAL SEMICONDUCTOR CMPTA13, CMPTA63 series types are complementary silicon darlington transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain.
This document describes the Central Semiconductor CMPTA series, which includes NPN (CMPTA13, CMPTA14) and PNP (CMPTA63, CMPTA64) complementary silicon Darlington transistors. These devices are manufactured using an epitaxial planar process and are designed for applications requiring extremely high gain. They are packaged in an epoxy molded surface mount SOT-23 case.
| Collector-Base Voltage | 30 V |
|---|---|
| Collector-Emitter Voltage | 30 V |
| Emitter-Base Voltage | 10 V |
| Continuous Collector Current | 500 mA |
| Power Dissipation | 350 mW |
| Operating and Storage Junction Temperature | -65 to +150 °C |
| Thermal Resistance | 357 °C/W |
| DC Current Gain (CMPTA14, CMPTA64) | 10,000 |
| DC Current Gain (CMPTA13, CMPTA63) @ 100mA | 10,000 |
| DC Current Gain (CMPTA14, CMPTA64) @ 100mA | 20,000 |
| Frequency (CMPTA13, CMPTA63) | 125 MHz |
The maximum continuous collector current is 500 mA.
The maximum power dissipation is 350 mW.
The operating and storage junction temperature ranges from -65 to +150 °C.