This document is a datasheet for the CMPT918 NPN silicon RF transistor produced by Central Semiconductor Corporation
The Central Semiconductor CMPT918 is an NPN silicon RF transistor manufactured using the epitaxial planar process. It is designed for high frequency (VHF/UHF) amplifier and oscillator applications and is housed in a surface mount SOT-23 package.
The document provides maximum ratings such as a collector-base voltage of 30V and a power dissipation of 350mW. It also lists key electrical characteristics including a transition frequency (ft) of 600 MHz and various capacitance values at specific test conditions.
| Collector-Base Voltage | 30 V |
|---|---|
| Collector-Emitter Voltage | 15 V |
| Emitter-Base Voltage | 3.0 V |
| Collector Current | 50 mA |
| Power Dissipation | 350 mW |
| Operating Temperature Range | -65 to +150 °C |
| Transition Frequency | 600 MHz |
| Package Type | SOT-23 |
The marking code is C3B.
The thermal resistance is 357 °C/W.
The maximum collector current is 50 mA.