The CMPTA27 is a NPN Silicon Darlington Transistor from Central Semiconductor Corp., it is designed for applications requiring extremely high gain.
The document describes the Central Semiconductor CMPTA27 as a Silicon NPN Darlington Transistor manufactured using an epitaxial planar process. It is packaged in an epoxy molded surface mount case (SOT-23) and designed for applications requiring extremely high gain.
Key specifications include a maximum collector-emitter voltage of 60V, a maximum collector current of 500mA, and a power dissipation of 350mW. The device features a minimum DC current gain (hFE) of 10,000 under specific test conditions.
| Collector-Base Voltage (VcBo) | 60 V |
|---|---|
| Collector-Emitter Voltage (VCES) | 60 V |
| Emitter-Base Voltage (VEBO) | 10 V |
| Collector Current (Ic) | 500 mA |
| Power Dissipation (Pp) | 350 mW |
| Operating and Storage Junction Temperature | -65 to +150 °C |
| Thermal Resistance (OJA) | 357 °C/W |
| Minimum DC Current Gain (hFE) | 10,000 |
| Transition Frequency (ft) | 125 MHz |
It is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process.
The device is epoxy molded in a surface mount SOT-23 case.
Both the Collector-Emitter Voltage (VCE) and Collector-Base Voltage (VCB) have a maximum rating of 60 V.
The maximum Power Dissipation is rated at 350 mW when Ta=25°C.