CMPTA06 and CMPTA56 are complementary silicon transistors manufactured by Central Semiconductor Corp., using the epitaxial planar process and molded in a surface mount package with epoxy resin, designed for small signal general purpose and switching applications.
This datasheet describes the Central Semiconductor CMPTA06 (NPN) and CMPTA56 (PNP) types, which are complementary silicon transistors manufactured using the epitaxial planar process. They are epoxy molded in a surface mount SOT-23 case and designed for small signal general purpose and switching applications.
The document provides maximum ratings, electrical characteristics, and mechanical outline dimensions for the devices. Key specifications include a collector-base voltage of 80 V, a collector current of 500 mA, and a power dissipation of 350 mW. The marking codes are C1G for the CMPTA06 and C2G for the CMPTA56.
| Collector-Base Voltage | 80 V |
|---|---|
| Collector-Emitter Voltage | 80 V |
| Emitter-Base Voltage | 4.0 V |
| Collector Current | 500 mA |
| Base Current | 100 mA |
| Power Dissipation | 350 mW |
| Operating and Storage Junction Temperature | -65 to +150 °C |
| Thermal Resistance | 357 °C/W |
The marking code for the CMPTA06 is C1G.
The marking code for the CMPTA56 is C2G.
These transistors are manufactured in a surface mount SOT-23 case.