CMPT930 is an NPN silicon transistor manufactured by Central Semiconductor Corp., packaged in a SOT-23 and designed for small signal general purpose amplifier applications
The document describes the CENTRAL SEMICONDUCTOR CMPT930 type as an NPN silicon transistor manufactured by the epitaxial planar process. It is epoxy molded in a surface mount package (SOT-23 case) designed for small signal general purpose amplifier applications.
The datasheet provides maximum ratings such as a Collector-Emitter Voltage of 45 V and a Power Dissipation of 350 mW at Ta=25°C. It also lists electrical characteristics including current gain (hFE), transition frequency (fT) up to 30 MHz, and capacitance values.
| Transistor Type | NPN Silicon Transistor |
|---|---|
| Collector-Emitter Voltage (VCEO) | 45 V |
| Power Dissipation (Pd) | 350 mW |
| Transition Frequency (fT) | 30 MHz |
The marking code is C1X.
Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector.