Central Semiconductor CMPTA29 High Voltage NPN Silicon Darlington Transistor Datasheet

The CMPTA29 is a high voltage NPN silicon Darlington transistor manufactured by Central Semiconductor Corp. The manufacturing process is an epitaxial planar process and the package is a surface mount package. It is designed for applications requiring extremely high voltage and high gain.


Central Semiconductor CMPTA29 High Voltage NPN Silicon Darlington Transistor Datasheet - cover page
Brand
Central Semiconductor
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
2
File format
PDF
File size
78 KB
Published
10 July, 2012
Updated
30 September, 2023
MD5 checksum
616E4D5148AA99365C0E587A1CA0BB8B

About this manual

The Central Semiconductor CMPTA29 is a Silicon NPN Darlington Transistor manufactured using the epitaxial planar process. It is epoxy molded in a surface mount SOT-23 package and is designed for applications requiring extremely high voltage and high gain. The marking code for this device is C29.

The document provides maximum ratings, electrical characteristics, and physical dimensions. Key specifications include a collector-emitter voltage of 100V, a collector current of 500mA, and a power dissipation of 350mW. The junction temperature range is -65 to +150°C.

What's inside

  • Maximum Ratings
  • Electrical Characteristics
  • Description
  • Package Information
  • Pin Configuration
  • Dimensions

Specifications

Package TypeSOT-23

Frequently asked questions

What is the marking code for the CMPTA29?

The marking code is C29.

What is the minimum DC current gain (hFE) at an emitter voltage of 5.0V and collector current of 10mA?

The minimum hFE is 10,000 under those test conditions.

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