The document describes the features and characteristics of the NPN silicon transistors CMPT6428 and CMPT6429 manufactured by Central Semiconductor Corp., designed for high gain amplifier applications.
This document is a datasheet for the Central Semiconductor CMPT6428 and CMPT6429 types, which are NPN silicon transistors manufactured by the epitaxial planar process. They are epoxy molded in a surface mount package (SOT-23 case) and are designed for high gain amplifier applications. The marking codes for these devices are C1K and C1L, respectively.
| Package Type | SOT-23 CASE |
|---|---|
| Process | epitaxial planar process |
| Collector-Base Voltage (VcBo) | 60V (CMPT6428), 55V (CMPT6429) |
| Collector-Emitter Voltage (VCEO) | 50V (CMPT6428), 45V (CMPT6429) |
| Operating and Storage Junction Temperature (Ty, Tstg) | -65 to +150 °C |
| Thermal Resistance (OA) | 357 °C/W |
The marking code for the CMPT6428 is C1K.
The marking code for the CMPT6429 is C1L.