This document describes the features and characteristics of BC807DS, including high current, total power dissipation, and replacement for two SOT23 packaged transistors.
The document describes the Philips BC807DS, which consists of two PNP transistors integrated into a single SOT457 (SC-74) plastic package. Key features include a high current capability of 600 mA per transistor and a total power dissipation of 600 mW when mounted on a printed-circuit board.
| Collector current (DC) | -500 mA |
|---|---|
| Peak collector current | -1 A |
| Total power dissipation (Tamb < 25 °C) | 600 mW |
| Collector-emitter voltage (open base) | -45 V |
The device has a maximum total power dissipation of 600 mW when mounted on a printed-circuit board with a single-sided copper mounting pad of 1 cm².
The maximum collector-emitter voltage is -45 V.