BFT45 is a PNP high-voltage transistor produced by Philips Semiconductors. Its features are low current (max. 500 mA) and high voltage (max. 250 V). This transistor is suitable for high voltage switching and amplification, as well as industrial and telephone applications.
This document is a product specification datasheet for the Philips BFT45, which is a PNP high-voltage transistor housed in a TO-39 metal package. The device is designed for applications involving high voltage switching and amplification, specifically targeting industrial and telephone sectors.
Key electrical characteristics include a maximum collector-base voltage of 250 V and a peak collector current capability of 1 A. The datasheet provides detailed limiting values, thermal resistance data, and characteristic curves under specific conditions such as Tj = 25 °C.
| Collector-emitter voltage (Vceo) | -250 V |
|---|---|
| Peak collector current (Icm) | 1 A |
| Total power dissipation (Ptot) | 5 W |
| DC current gain (hFE) | 50 to 150 |
| Collector capacitance (Cce) | 15 pF |
| Transition frequency (ft) | 70 MHz |
The device supports a DC collector current of up to 500 mA.
The total power dissipation is rated at a maximum of 5 W.
The collector-base and collector-emitter voltages are both limited to a maximum of 250 V.