BFT46 is an N-channel silicon FET intended for low level general purpose amplifiers in thick and thin-film circuits.
This datasheet describes the BFT46, a symmetrical n-channel silicon epitaxial planar junction field-effect transistor housed in a microminiature plastic SOT23 envelope. The device is designed for use in low level general purpose amplifiers within both thick and thin-film circuits. Drain and source terminals are interchangeable.
The document provides detailed electrical characteristics, including maximum ratings for voltage, current, and power dissipation. It also includes typical performance curves for parameters such as transfer admittance, output admittance, and noise voltage, along with package outline dimensions.
| Drain-source voltage (max) | 25 V |
|---|---|
| Total power dissipation (max) | 250 mW |
| Drain current (max) | 10 mA |
| Storage temperature range | -65 to +150 °C |
| Package type | SOT23 |
The transistor is intended for low level general purpose amplifiers in thick and thin-film circuits.
Yes, the datasheet notes that the drain and source are interchangeable.