BFG196 is an NPN silicon RF transistor designed for low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz. It can operate at collector currents ranging from 20 mA to 80 mA. It is also suitable for power amplifiers in DECT and PCN systems. The transistor has a cutoff frequency of 7.5 GHz and a gain of 1.5 dB at 900 GHz. It is an electrostatic discharge sensitive device and requires careful handling.
The document provides technical data for the BFG196, a high-performance NPN Silicon RF Transistor intended for use as a low noise amplifier (LNA) or power amplifier in DECT and PCN systems operating up to 7.5 GHz. Key features include operation at collector currents between 20 mA and 80 mA with a transition frequency of 7.5 GHz.
| Collector-emitter voltage (VCEO) | 12 V |
|---|---|
| Collector current (IC) | 100 mA |
| Total power dissipation (PTOT) | 800 mW |
| Junction temperature (Tj) | 150 °C |
The device supports broadband amplification up to 7.5 GHz.
It is designed for operation at collector currents from 20 mA to 80 mA.