This document describes the features and characteristics of BAT 15- … D silicon Schottky diodes, including ESD sensitivity, maximum ratings, reverse voltage, junction temperature, forward current, and storage temperature range.
This document provides technical specifications for the BAT BAT 15-020D Silicon Schottky Diode. It lists maximum ratings including a reverse voltage of 4V, a junction temperature of 175°C, and a forward current of 100 mA. The device is noted as an ESD-sensitive device requiring careful handling precautions.
The datasheet details electrical characteristics at TA = 25°C, including breakdown voltage, diode capacitance, forward voltage, single sideband noise figure, and differential forward resistance for various frequencies. It also includes ordering codes and pin configuration information.
| Reverse voltage | 4V |
|---|---|
| Junction temperature | 175 °C |
| Forward current | 100 mA |
| Storage temperature range | - 65 … + 150 |
| Breakdown voltage | 4V |
| Diode capacitance | 0.30 pF |
| Forward voltage (IF = 1 mA) | 0.26 V |
| Single sideband noise figure | 6.0 dB |
| Differential forward resistance | 3.5 W |
The device is an ESD-sensitive device and requires observation of handling precautions.
The maximum junction temperature is 175°C.
The reverse voltage rating is 4V.