BFQ 193 NPN Silicon RF Transistor is a low-noise, high-gain amplifier produced by Semiconductor Group and can be used for applications in the 2GHz range
This document is a technical datasheet for the Siemens BFQ 193, an NPN silicon RF transistor designed for low noise, high-gain amplifiers up to 2 GHz and linear broadband applications. The device features a SOT-89 package with specific pin configurations (1=B, 2=C, 3=E).
| Collector-emitter voltage | 12 V |
|---|---|
| Collector-base voltage | 20 V |
| Emitter-base voltage | 2 V |
| Collector current | 80 mA |
| Base current | 10 mA |
| Junction temperature | 150 °C |
| Transition frequency (typ) | 7.5 GHz |
| Noise figure at 900 MHz | 1.3 dB |
The maximum junction temperature (Tj) is 150 °C.
It is designed for low noise, high-gain amplifiers up to 2 GHz.