Key facts
- Brand
- CEL
- Model
- NE5520379A
- Industry
- Industrial
- Documents
- 4
- Languages
- EN
- Last added
- 2012-07-06
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CEL NE5520379A LD-MOSFET Datasheet
The document describes the NE5520379A, an N-channel silicon LD-MOSFET manufactured using NEC's NEWMOS technology (0.6 um WSi gate lateral MOSFET). It is specifically designed as a transmission power amplifier for 3.2V GSM900/DCS 1800 Class 4 handsets and other digital/analog cellular phones.
Read onlineCEL NE5520379A specifications
| Output Power (Typ) | +35.5 dBm @ 915 MHz, Vos = 3.2 V |
|---|---|
| Linear Gain (Typ) | 16 dB @ Pin = +10 dBm |
| Power Added Efficiency (Typ) | 65% @ Gate Drain |
| Operating Drain Current | 15 A |
| Package Dimensions | 5.7x5.7x1.1 mm MAX |
| Supply Voltage Range | 2.4 to 7.5 V |
All CEL NE5520379A documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the typical output power at 915 MHz?
The device delivers +35.5 dBm output power at 915 MHz with a supply voltage of 3.2 V.
What is the recommended operating temperature range?
The recommended operating temperature range is -30 to +85 °C.
What is the typical output power at 915 MHz?
The device delivers 35.5 dBm output power at 915 MHz and 3.2 V.
Is the NE5520379A compatible with DCS 1800?
Yes, it is listed for use in 3.2 V GSM900/DCS 1800 Dual Band Handsets.
What is the primary application of the NE5520279A?
It is specially designed as a transmission power amplifier for 3.2 V GSM/DCS1800 Class 1 Handsets.
What is the maximum operating drain current for the NE5520279A?
The maximum operating drain current is 800 mA.