Datasheet
The document describes an N-channel silicon power MOSFET called NE5520379A, which is designed as the transmission power amplifier for 3.2V GSM900 handsets. It features high output power, high linear gain, and high power added efficiency.
Datasheet
NEC's NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2V GSM900 handsets. This device can deliver 35.5 dBm output power at 915 MHz and 3.2 V, or 34.6 dBm output power at 2.8 V by varying the gate voltage as a power control function.
Datasheet
NE5520279A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. It can be operated at up to 6 V for higher power, Fixed Wireless Access applications.
Datasheet
NE5520279A is a low cost, high performance, high reliability LD-MOSFET from NEC, suitable for 0.7-2.5GHz fixed wireless, mobile wireless and other applications.
