The BLF244 is a VHF power MOS transistor with high power gain, low noise figure, easy power control, good thermal stability, and the ability to withstand full load mismatch. It is designed as a silicon N-channel enhancement mode vertical D-MOS transistor for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request. This product contains beryllium oxide and requires proper handling for safety.
The document is a product specification datasheet for the Philips BLF244, an N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. It features high power gain, low noise figure, and gold metallization for reliability.
The datasheet provides comprehensive technical data including limiting values, thermal resistance, electrical characteristics at 25°C, and application information for Class-B operation. It includes test circuit component lists and package outline dimensions for the SOT123 flange envelope.
| DC drain current (ID) | - 3 A |
|---|---|
| Total power dissipation (PD) | 38 W |
| Junction temperature (Tj) | - 200 °C |
| Operating frequency | 175 MHz |
The transistor is encapsulated in a 4-lead SOT123 flange envelope with a ceramic cap.
The maximum total power dissipation is 38 W when the temperature is 25 °C.
The maximum drain-source voltage rating is 65 V.
The maximum junction temperature is 200 °C.