BLF225 is a VHF power MOS transistor produced by Philips company. It features easy power control, good thermal stability and withstands full load mismatch.
The Philips BLF225 is an N-channel enhancement-mode vertical D-MOS transistor encapsulated in a 4-lead SOT 123 flange envelope with a ceramic cap. It features easy power control, good thermal stability, and the ability to withstand full load mismatch. The device operates at 175 MHz in Class-B mode.
| Operating Frequency | 175 MHz |
|---|---|
| Junction Temperature (Max) | 200 °C |
It is a Silicon N-channel enhancement-mode vertical D-MOS transistor.
It is a silicon N-channel enhancement-mode vertical D-MOS transistor designed for communications transmitter applications in the VHF frequency range.
The device can dissipate a maximum of 68 W when the thermal resistance from junction to mounting base (Rth j-mb) is 25 °C.
The maximum drain-source voltage is 40 V, and the maximum gate-source voltage is 20 V.