BLF242 is a HF/VHF power MOS transistor produced by Philips Semiconductors. It has the characteristics of high power gain, low noise, easy power control, good thermal stability, etc.
This datasheet describes the Philips BLF242, a silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range. The device features high power gain, low noise, and excellent reliability due to gold metallization, encapsulated in a 4-lead SOT 123 flange envelope with a ceramic cap.
The document provides comprehensive technical data including limiting values, thermal resistance, and electrical characteristics such as breakdown voltage, leakage current, and capacitance. It also includes application information for class-B operation, offering typical performance curves, a test circuit diagram, and a list of components required for the reference design.
| Junction temperature | 200 °C |
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The typical noise figure is 5.5 dB when the input and output power are matched for 5 W.
The device is encapsulated in a 4-lead, SOT 123 flange envelope with a ceramic cap.