This is a high power gain LDMOS transistor with good ruggedness, designed for broadband operation and suitable for communication transmitter applications in the 1.8 to 2.2 GHz frequency range.
This document is a preliminary specification for the Philips BLF2045, a Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in an SOT467C package with a ceramic cap. The device features high power gain and excellent ruggedness, designed specifically for broadband operation in communication transmitter applications within the 1.8 to 2.2 GHz frequency range (PCN/PCS). Key design aspects include easy power control and a common source connected to the mounting flange to eliminate DC isolators.
The datasheet provides quick reference data for RF performance at 25 °C in a common source test circuit, detailing parameters such as drain-source voltage, gate-source voltage, and peak envelope load power. It also includes limiting values according to IEC 134 standards, thermal characteristics, and typical characteristic curves for capacitance, intermodulation distortion, and impedance versus frequency. Application information covers class-AB operation conditions and a list of components required for the test circuit.
| Frequency Range | 1.8 to 2.2 GHz |
|---|---|
| Package Type | SOT467C |
| Storage Temperature Range | -65 to +150 °C |
It is designed for communication transmitter applications (PCN/PCS) in the 1.8 to 2.2 GHz frequency range.
The device is intended for communication transmitter applications in the 1.8 to 2.2 GHz frequency range.
The maximum drain-source voltage is 65 V.
It can withstand a load mismatch at 30 W (PEP) of peak envelope load power.