The BLF2022-90 is a 90 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. It features easy power control, excellent ruggedness, high power gain, excellent thermal stability and internal matching for ease of use.
The document describes the Philips BLF2022-90, an internal-matched LDMOS transistor intended for RF power amplifiers in W-CDMA base stations and multicarrier applications within the 2000 to 2200 MHz frequency range. Key features include a gain of 12.5 dB, 20% efficiency, and excellent thermal stability.
| Output Power (AV) | 11.5 W |
|---|---|
| Gain | 12.5 dB |
| Efficiency | 20% |
| ACPR | -42 dBc at 3.84 MHz |
| Frequency Range | 2000 to 2200 MHz |
| Drain-Source Voltage (Max) | 65 V |
| DC Drain Current (Max) | 12 A |
The typical supply voltage for W-CDMA performance is 28 V.
The maximum junction temperature (Tj) is 200 °C.