BLF2022-70 is a 70 W LDMOS power transistor produced by Philips Corporation. It is suitable for W-CDMA base stations and multi-carrier applications in the 2000 to 2200 MHz frequency range.
The document describes the Philips BLF2022-70, a discrete semiconductor device intended as an RF power amplifier for W-CDMA base station applications. It operates in the frequency range of 2000 to 2200 MHz with a typical output power of 7.5W (AV) and a gain of 12.5 dB at a supply voltage of 28 V.
The datasheet details limiting values, thermal characteristics, and electrical parameters such as drain-source breakdown voltage and on-state resistance. It also includes application information for class-AB operation, providing typical performance graphs for power gain, efficiency, and intermodulation distortion under various load conditions.
| Output Power (AV) | 7.5 W |
|---|---|
| Gain | 12.5 dB |
| Efficiency | 20% |
| ACPR | -42 dBc at 3.84 MHz |
| Frequency Range | 2000 to 2200 MHz |
| Drain-Source Voltage (Max) | 65 V |
| Gate-Source Voltage (Max) | +15 V |
| DC Drain Current (Max) | 9 A |
| Junction Temperature (Max) | 200 °C |
The maximum drain-source voltage is 65 V, gate-source voltage is +15 V, DC drain current is 9 A, and storage temperature ranges from -65 to +150 °C.
Yes, it is designed specifically as an RF power amplifier for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range.