BLF2022-30 is a 30 W LDMOS power transistor from Philips Semiconductors, designed for broadband operation (2000 to 2200 MHz) and used in RF power amplifiers for W-CDMA base stations and multicarrier applications.
This document is a product specification datasheet for the Philips BLF2022-30, a UHF power LDMOS transistor intended for RF power amplifiers in W-CDMA base stations and multicarrier applications within the 2000 to 2200 MHz frequency range. The device is designed for broadband operation and is internally matched for ease of use.
Key performance features include a supply voltage of 28 V and a drain current of 240 mA, delivering an output power of 3.5 W (AV) with a gain of 12.9 dB and an efficiency of 16.5%. The transistor exhibits excellent ruggedness, capable of withstanding a load mismatch corresponding to a VSWR of 10:1. The document provides detailed electrical characteristics, thermal data, and typical RF performance graphs.
| Supply Voltage | 28 V |
|---|---|
| Drain Current | 240 mA |
| Gain | 12.9 dB |
| Efficiency | 16.5% |
| Output Power | 3.5 W (AV) |
| Frequency Range | 2000 to 2200 MHz |
| Drain-Source Voltage | 65 V |
It is used for RF power amplifiers in W-CDMA base stations and multicarrier applications.
The transistor is designed for operation between 2000 and 2200 MHz.
It can withstand a load mismatch corresponding to a VSWR of 10:1.