BLF1043 UHF power LDMOS transistor is a high power gain, easy power control, rugged and durable transistor, designed for broadband operation (HF to 1 GHz).
The document is a datasheet for the Philips BLF1043, a UHF power LDMOS transistor designed for communication transmitter applications in the UHF frequency range. It features a silicon N-channel enhancement mode lateral D-MOS structure encapsulated in a 2-lead flangeless ceramic package (SOT538A). The device is optimized for broadband operation from HF to 1 GHz and is designed to reduce common mode inductance by connecting the common source to the mounting base.
The datasheet details the transistor's RF performance in a common source class-AB circuit, providing typical values for power gain and efficiency across the frequency spectrum. It also includes limiting values for absolute maximum ratings, thermal characteristics, and specific electrical parameters such as breakdown voltage, leakage current, and capacitance. Additionally, the document outlines the mechanical dimensions of the SOT538A package and defines the status of the specification as an 'Objective specification' from February 2000.
The transistor is designed for broadband operation from HF to 1 GHz.
The maximum drain-source voltage rating is 75 V.
The maximum total power dissipation is 10 W.
The typical input capacitance is 11 pF.