BLF1049 is a LDMOS power transistor manufactured by Philips Semiconductors. It is used in GSM, EDGE and CDMA base stations and multi-carrier applications in the 800 to 1000 MHz frequency range. It has a maximum output power of 125W, a gain of 16.5dB, an efficiency of 54% and good anti-interference performance.
This document is a product specification datasheet for the BLF1049, an LDMOS power transistor designed for RF applications in GSM, EDGE, and CDMA base stations. It operates within the 800 MHz to 1000 MHz frequency range with a typical supply voltage of 27 V.
| Frequency Range | 800 to 1000 MHz |
|---|---|
| Output Power (1-tone CW) | 125 W |
| Gain (1-tone CW) | 16.5 dB |
| Drain Efficiency (1-tone CW) | 54% |
| ACPR400 (EDGE) | -64 dBc |
| EVM (EDGE) | 2% rms |
| Drain-Source Voltage Max | 75 V |
| Junction Temperature Max | 200 °C |
The typical performance data assumes a supply voltage of 27 V.
The maximum drain-source voltage is rated at 75 V.
The typical output power is 125 W in 1-tone CW mode at 920 MHz.
The typical performance data assumes a supply voltage of 27 V.