BLF0810-90 and BLF0810S-90 are LDMOS transistors produced by Philips Semiconductors. They have high power gain, easy power control, excellent ruggedness, bottom source eliminates DC isolators, reducing common mode inductance, and are designed for broadband operation (750MHz to 1GHz).
This document is a preliminary specification for the Philips BLF0810-90 and BLF0810S-90, which are Silicon N-channel enhancement mode lateral D-MOS transistors. These devices are encapsulated in 2-lead flange packages (SOT502A and SOT502B) and are designed for broadband operation between 750 MHz and 1 GHz. They feature high power gain, easy power control, and excellent ruggedness, making them suitable for common source class-AB operation in CDMA applications within the 750 to 960 MHz frequency range.
| Drain-source voltage | 75 V |
|---|---|
| Gate-source voltage | +15 V |
| Storage temperature | -65 to 150 °C |
| Junction temperature | 200 °C |
The transistors are designed for broadband operation from 750 MHz to 1 GHz.
The typical power gain is 16 dB.
The ACPR is less than -45 dBc at 750 kHz with a bandwidth of 30 kHz.