BUK456-200 is an N-channel enhancement mode power MOS transistor, suitable for applications such as switched mode power supplies, motor control, welding, DC/DC and AC/DC converters.
This datasheet describes the Philips BUK456-200A/B, an N-channel enhancement mode field-effect power transistor packaged in a TO220AB plastic envelope. The device is designed for use in switched mode power supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and general purpose switching applications. It features a maximum drain-source voltage of 200V and a maximum total power dissipation of 150W.
| Drain-source voltage | 200 V |
|---|---|
| Drain current (DC) | 19 A / 17 A |
| Total power dissipation | 150 W |
| Junction temperature | 175 °C |
| Package type | TO220AB |
The maximum junction temperature is 175 °C.
The maximum total power dissipation is 150 W when the junction temperature is 25°C.
The maximum junction temperature is 175°C.
The maximum drain-source voltage is 200 V.