BLF177 is a high power MOS transistor produced by Philips Semiconductors. It has high power gain, low intermodulation distortion, easy power control, good thermal stability and full load matching characteristics.
This document is a product specification for the Philips BLF177, an N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. The device is encapsulated in a 4-lead SOT121 flange envelope with a ceramic cap and is intended for high power gain and low intermodulation distortion applications.
The datasheet provides comprehensive technical data including limiting values, thermal resistance, electrical characteristics, and RF performance metrics for class-AB and class-B operation. It also includes application information for class-AB circuits, a list of components for test circuits, and package outline dimensions.
| Drain-source voltage | 110 V |
|---|---|
| Gate-source voltage | 20 V |
| DC drain current | 16 A |
| Total power dissipation | 220 W |
| Storage temperature | -65 to 150 °C |
| Junction temperature | 200 °C |
| Package type | SOT121 |
The transistor is designed for industrial and military applications in the HF/VHF frequency range.
The maximum junction temperature is 200 °C.
No, these products are not designed for use in life support appliances or systems.