BUK456-100A/B is an N-channel enhancement mode power MOS transistor suitable for various applications such as switched mode power supplies, motor control, welding, DC/DC and AC/DC converters. It features a drain-source voltage of 100V, a drain current of 34A, a total power dissipation of 150W, and a junction temperature of 175°C.
This document is a product specification datasheet for the Philips BUK456-100A and BUK456-100B PowerMOS transistors. These are N-channel enhancement-mode field-effect power transistors designed in a plastic TO220AB envelope.
| Drain-source voltage (Vos) | 100 V |
|---|---|
| Drain current (DC) - BUK456-100A | 34 A |
| Drain current (DC) - BUK456-100B | 32 A |
| Total power dissipation (Prot) | 150 W |
| Junction temperature (Tj) | 175 °C |
| Package type | TO220AB |
The maximum gate-source voltage (+Vos) is 30 V.
The maximum total power dissipation is 150 W when the junction temperature (Tj) is 25°C.
The maximum continuous drain current is 34 A for model A and 32 A for model B when Tj = 25°C.