BLF1820-70 is a 70W LDMOS power transistor from Philips, designed for GSM, EDGE and CDMA base stations and multicarrier applications in the 1800 to 2000 MHz frequency range.
This document is a product specification datasheet for the Philips BLF1820-70, a 70 W UHF power LDMOS transistor. It is designed for broadband operation in the 1800 to 2000 MHz frequency range, specifically for RF power amplifiers in GSM, EDGE, and CDMA base stations. The device features typical output power of 65 W (PEP) with a gain of 12 dB and 32% efficiency at 26 V supply voltage.
| Output Power | 65 W (PEP) |
|---|---|
| Gain | 12 dB |
| Efficiency | 32% |
| Frequency Range | 1800 to 2000 MHz |
| Drain-Source Voltage | 65 V |
| Gate-Source Voltage | +15 V |
| DC Drain Current | 9 A |
| Junction Temperature | 200 °C |
It is used for RF power amplifiers in GSM, EDGE, and CDMA base stations and multicarrier applications.
The transistor operates from 1800 to 2000 MHz.
The typical performance data is given at a supply voltage of 26 V.