BLF175 is a power MOS transistor produced by Philips Corporation. It has the characteristics of high power gain, low intermodulation distortion, easy power control, good thermal stability, etc.
This document is a product specification datasheet for the Philips BLF175, a silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range. The device features a 4-lead SOT123 flange envelope with a ceramic cap and gold metallization for reliability.
The datasheet provides comprehensive technical data including limiting values, thermal resistance, electrical characteristics, and RF performance curves for Class-A, Class-AB, and Class-B operation. It also includes a list of components for a recommended test circuit and package outline dimensions.
| Storage temperature | -65 to 150 °C |
|---|---|
| Junction temperature | 200 °C |
The device is supplied in a 4-lead, SOT123 flange envelope with a ceramic cap.
No, these products are not designed for use in life support appliances or systems.