The BLF147 VHF power MOS transistor is a silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range.
This document is a product specification datasheet for the Philips BLF147, an N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. The device features high power gain, low intermodulation distortion, and good thermal stability.
| Drain-source breakdown voltage (V(BR)DSS) | 65 V |
|---|---|
| Gate-source voltage (VGS) | = 20 V |
| DC drain current (ID) | - 25 A |
| Total power dissipation (Ptot) at Tc = 25 °C | - 220 W |
| Junction temperature (Tj) | - 200 °C |
| Thermal resistance junction-to-mounting base (Rth j-mb) | 0.8 K/W |
The transistor is designed for industrial and military applications in the HF/VHF frequency range.
The transistor is encapsulated in a 4-lead, SOT121 flange envelope.
Typical gain is greater than 35 dB and efficiency is greater than 70% for CW class-B operation.