BLF0810-180 and BLF0810S-180 are base station LDMOS transistors designed for frequencies from 800 to 1000 MHz. They feature excellent thermal stability, easy power control, high power gain, and excellent ruggedness.
This datasheet describes the BLF0810-180 and BLF0810S-180, which are 180 W LDMOS power transistors intended for base station applications operating between 800 and 1000 MHz. The devices feature high power gain, excellent thermal stability, and ruggedness suitable for broadband operation.
| Output power (Class-AB) | 180 W |
|---|---|
| Frequency range | 800 to 1000 MHz |
| Drain-source voltage (Max) | 75 V |
| Gate-source voltage (Max) | +15 V |
| Junction temperature (Max) | 200 °C |
They are designed for common source class-AB operation and CDMA/multicarrier applications in the 860 to 960 MHz frequency range.
The typical drain efficiency is 27% when operating with a supply voltage of 27 V and an output current of 1130 mA.