Philips Semiconductors BUK454-200A/B PowerMOS Transistor Datasheet

BUK454-200A/B is an N-channel enhancement mode power MOS transistor suitable for surface mount applications. It has a drain-source voltage of 200V, a drain current of 9.2A (DC), and a total power dissipation of 90W. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and general purpose switching applications.


Philips Semiconductors BUK454-200A/B PowerMOS Transistor Datasheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
Chinese
Pages
7
File format
PDF
File size
76 KB
Published
06 July, 2012
Updated
28 September, 2023
MD5 checksum
03363520AC4CBE6A55E186DA83567AC3

About this manual

This datasheet describes the Philips Semiconductors BUK454-200A/B, an N-channel enhancement mode PowerMOS transistor housed in a TO220AB plastic envelope. The device is designed for surface mount applications and is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC converters, AC/DC converters, and general purpose switching applications. This manual is written in Chinese.

What's inside

  • General Description
  • Quick Reference Data
  • Limiting Values
  • Static Characteristics
  • Dynamic Characteristics
  • Reverse Diode Limiting Values
  • Avalanche Limiting Value
  • Mechanical Data

Specifications

Drain-source voltage (VDS)200 V
Drain current (DC) at Tmb=25°C9.2 A
Total power dissipation (Ptot)90 W
Junction temperature (Tj)175 °C
Forward transconductance (gfs)3.5 S typ.
Input capacitance (Ciss)700 pF typ.
Output capacitance (Coss)100 pF typ.

Frequently asked questions

What is the package type?

The transistor is housed in a TO220AB plastic envelope suitable for surface mount applications.

What is the maximum junction temperature?

The maximum junction temperature (Tj) is 175 °C.

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