BF999 is a N-channel MOSFET, suitable for high frequency applications such as FM applications.
This document is a technical datasheet for the Infineon Technologies BF999, a Silicon N-Channel MOSFET Triode designed specifically for high-frequency applications. The device is optimized for use in FM stages and operates effectively at frequencies up to 300 MHz.
The datasheet provides comprehensive electrical characteristics, including DC parameters such as drain-source breakdown voltage (20 V) and gate-source leakage current. It also details AC performance metrics like forward transconductance, input capacitance, and power gain measured at various frequencies.
| Drain-source voltage | 20 V |
|---|---|
| Drain current | 30 mA |
| Total power dissipation | 200 mW |
| Storage temperature | -55 ... 150 °C |
| Forward transconductance | 14 to 16 mS |
| Gate input capacitance | 2.5 pF |
The device is suitable for high-frequency stages up to 300 MHz.
Yes, it is an electrostatic discharge sensitive device and handling precautions must be observed.