BFG193 is a NPN silicon RF transistor, suitable for low noise, high gain amplifiers with frequencies up to 2 GHz.
This document is a datasheet for the Infineon BFG193, an NPN Silicon RF Transistor designed for low noise and high-gain amplifiers operating up to 2 GHz. It specifies that the device is suitable for linear broadband amplifiers with a noise figure of 1.3 dB at 900 MHz and a cutoff frequency (fT) of 8 GHz. The transistor is housed in a SOT223 package and is marked as ESD sensitive.
The datasheet provides comprehensive electrical characteristics, including DC parameters such as collector-emitter breakdown voltage (12 V), collector current (80 mA), and DC current gain (hFE) ranging from 50 to 200. It also details AC characteristics like transition frequency, capacitances, noise figure, and power gain at various frequencies (900 MHz and 1.8 GHz). Graphs illustrate the relationship between power gain and collector current, as well as intermodulation intercept points.
| Collector-emitter voltage (VCEO) | 12 V |
|---|---|
| Collector-emitter cutoff current (ICEO) | 100 nA |
| Collector current (IC) | 80 mA |
| Total power dissipation (Ptot) | 600 mW |
| Junction temperature (Tj) | 150 °C |
| DC current gain (hFE) min | 50 |
| Noise figure at 900 MHz | 1.3 dB |
| Cutoff frequency (fT) | 8 GHz |
The maximum collector-emitter voltage (VCEO) is 12 V.
The noise figure is 1.3 dB at 900 MHz.
The maximum total power dissipation is 600 mW.
The cutoff frequency (fT) is 8 GHz.