BFQ19S is a NPN silicon RF transistor, used for low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA.
The Infineon BFQ19S is an NPN silicon RF transistor intended for use in low noise, low distortion broadband amplifiers within antenna and telecommunications systems. It is optimized for operation at collector currents ranging from 10 mA to 70 mA and frequencies up to 1.5 GHz. The device is housed in a SOT89 package with a type marking of FG.
| Collector-emitter voltage | 15 V |
|---|---|
| Collector current | 75 mA |
| Total power dissipation | 1 W |
| Junction temperature | 150 °C |
| Transition frequency | 5.5 GHz |
| Collector-base capacitance | 1.5 pF |
| Noise figure at 900 MHz | 2.5 dB |
| Power gain at 900 MHz | 11.5 dB |
The maximum collector-emitter voltage is 15 V.
The transistor is designed for systems up to 1.5 GHz.
The typical DC current gain (hfe) is 100.