BFG 19S is a NPN silicon RF transistor, suitable for low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 10 mA to 70 mA.
This document is a technical datasheet for the Infineon Technologies BFG 19S, an NPN silicon RF transistor designed for low noise and low distortion broadband amplifiers. It is intended for use in antenna and telecommunication systems operating at frequencies up to 1.5 GHz with collector currents ranging from 10 mA to 70 mA.
| Collector-emitter voltage (VcEO) | 15 V |
|---|---|
| Collector current (Io) | 100 mA |
| Transition frequency (fT) | 4 GHz (min.) |
| Collector-base capacitance (Cob) | 0.85 pF (typ.) |
It is intended for use in low noise, low distortion broadband amplifiers within antenna and telecommunication systems operating up to 1.5 GHz.
The device supports a collector-emitter voltage of 20 V under specific conditions.
The maximum total power dissipation is rated at 1 W when the temperature is less than 75 °C.