Philips PBSS4320X NPN Low VCEsat Transistor Datasheet

PBSS4320X is a low VCEsat (BISS) type of NPN transistor produced by Philips. Its features are SOT89 (SC-62) package, low saturation voltage, high efficiency, low heat generation, suitable for driving power converters, battery chargers, LCD backlights, etc.


Philips PBSS4320X NPN Low VCEsat Transistor Datasheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
12
File format
PDF
File size
103 KB
Published
03 July, 2012
Updated
30 September, 2023
MD5 checksum
4A5329668F8217085155BACE598E7DB9

About this manual

This document is a product specification datasheet for the Philips Semiconductors PBSS4320X. It describes an NPN low collector-emitter saturation voltage (Vcesat) transistor housed in a plastic SOT89 surface-mounted package.

The device is designed for power management applications, including DC/DC converters, supply line switching, battery chargers, and LCD backlighting. Key features include high collector current capability and reduced printed-circuit board requirements due to its low saturation voltage.

What's inside

  • Features
  • Applications
  • Quick Reference Data
  • Limiting Values
  • Thermal Characteristics
  • Characteristics

Specifications

Collector-Emitter Voltage (VCEO)20 V
Collector Current (DC) (IC)3 A
Peak Collector Current (ICM)5 A
Equivalent On-Resistance (Rcesat)105 mΩ
Package TypeSOT89 (SC-62)

Frequently asked questions

What are the typical applications for this transistor?

It is used in power management, DC/DC converters, supply line switching, battery chargers, and LCD backlighting.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is 20 V.

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