This data sheet provides the characteristics, applications, description, pins, parameters and other information of 50 V, 2 A NPN low VCEsat (BISS) transistor PBSS4250X.
The document describes the Philips PBSS4250X, an NPN low Vce(sat) (BISS) transistor designed for power management applications. Key features include a high collector current capability of 2 A DC and 5 A peak, with reduced printed-circuit board requirements due to its SOT89 plastic package.
The datasheet details limiting values such as a maximum collector-emitter voltage of 50 V and total power dissipation up to 1 W. It also provides thermal characteristics, electrical characteristics including current gain and saturation voltages, and mechanical dimensions for the SC-62 (SOT89) package.
| Collector-Emitter Voltage (VCEO) | 50 V |
|---|---|
| Collector Current (DC) (IC) | 2 A |
| Peak Collector Current (ICM) | 5 A |
| Equivalent On-Resistance (Rcesat) | 160 mΩ |
| Package Type | SOT89 (SC-62) |
The maximum Vce(sat) is 380 mV when Ic = 2 A and Ib = 100 mA.
The minimum DC current gain (hFE) is 300 when Ic = 1 A.