This document presents the preliminary specification of an NPN medium power transistor, PBSS4540Z. The transistor features high current (max. 10A), low voltage (max. 40V), and low VCEsat. It is suitable for heavy-duty battery-powered equipment (automotive, telecom, and audio/video) as well as low supply voltage IC applications.
The document describes the Philips PBSS4540Z, an NPN medium power transistor designed for high current (max. 10 A) and low voltage (max. 40 V) applications. It is housed in a plastic SOT223 surface-mounted package with a collector pad optimized for heat transfer. The device is suitable for heavy-duty battery-powered equipment in automotive, telecom, and audio/video sectors, as well as low supply voltage IC applications.
| Collector current (DC) | 5 A |
|---|---|
| Collector-base voltage | 40 V |
| Collector-emitter voltage | 40 V |
The PNP complement of the PBSS4540Z is the PBSS5540Z.
The maximum operating ambient temperature is +150 °C.
The device is in a plastic surface mounted SOT223 package.