Philips PBSS4480X NPN Low VCEsat Transistor Datasheet

PBSS4480X is a high hFE and low VCEsat NPN low VCEsat (BISS) transistor with high collector current capability and high efficiency. It is suitable for medium power peripheral drivers, strobe flash units, inverters, power switches, medium power DC-DC conversion and battery chargers.


Philips PBSS4480X NPN Low VCEsat Transistor Datasheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
13
File format
PDF
File size
102 KB
Published
03 July, 2012
Updated
30 September, 2023
MD5 checksum
F155F070C9BDE2FD7A81B54FFDF1C665

About this manual

The Philips PBSS4480X is an NPN low VCEsat (BISS) transistor designed for medium power peripheral drivers and power switch applications. Key features include high collector current capability up to 4 A DC and 10 A peak, along with high efficiency to minimize heat generation. The device is housed in a plastic SOT89 (SC-62) surface-mounted package with a collector pad for thermal management.

What's inside

  • Features
  • Applications
  • Quick Reference Data
  • Ordering Information
  • Limiting Values
  • Thermal Characteristics
  • Characteristics
  • Package Description

Specifications

Collector-emitter voltage80 V
Collector current (DC)4 A
Peak collector current10 A
Equivalent on-resistance54 mΩ
Package typeSOT89

Frequently asked questions

What is the maximum junction temperature?

The maximum junction temperature is 150 °C.

What is the maximum DC collector current for this transistor?

The maximum DC collector current is 4 A.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage is 80 V.

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