The PBSS5120T is a PNP BISS transistor from Philips Semiconductors that provides ultra low VCEsat and RCEsat parameters. This transistor is suitable for power management, DC/DC conversion, supply line switching, battery charger, LCD backlighting and other applications.
This document is a product specification datasheet for the Philips PBSS5120T, a PNP low VCEsat (BISS) transistor. It is designed for applications requiring low collector-emitter saturation voltage and high collector current capability, such as power management, DC/DC conversion, and driver circuits for lamps and LEDs. The device is available in a plastic surface-mounted SOT23 package with three leads.
| Collector-Emitter Voltage (VCEO) | -20 V |
|---|---|
| Collector Current (DC) (IC) | -1 A |
| Peak Collector Current (ICM) | -2 A |
| Equivalent On-Resistance (RCEsat) | 250 mΩ |
| Package Type | SOT23 |
| Operating Ambient Temperature | -65 to +150 °C |
The NPN complement is the PBSS4120T.
It is used for power management, DC/DC conversion, supply line switching, battery charging, and LCD backlighting.
The maximum power dissipation is 300 mW at Tamb < 25 °C with a standard footprint.