PBSS4350D is an NPN transistor with high current capabilities and low VCEsat. It is suitable for heavy duty battery powered equipment (automotive, telecom, and audio/video) as well as VCEsat critical applications. It can be used in all battery driven equipment to save battery power.
The Philips PBSS4350D is an NPN transistor designed for high current capabilities and low collector-emitter saturation voltage (Vcesat). It is packaged in a SC-74 plastic package (SOT457) and is suitable for heavy-duty battery-powered equipment in automotive, telecom, and audio/video applications, as well as low supply voltage IC applications.
| Collector current (DC) | 3 A |
|---|---|
| Peak collector current | 5 A |
| Peak base current | 1 A |
| Total power dissipation | 600 mW |
| Collector-base voltage | 60 V |
| Collector-emitter voltage | 50 V |
| Emitter-base voltage | 6 V |
| Storage temperature | -65 to +150 °C |
| Junction temperature | 150 °C |
| DC current gain | 200 |
| Collector-emitter saturation voltage | 290 mV |
| Package type | SC-74 |
The maximum DC collector current is 3 A.
The device is in a SC-74 plastic package.