The document describes the features and characteristics of the PMEM4010ND NPN transistor/Schottky diode module, including total power dissipation, high current capability, reduced PCB area, and reduced pick and place costs. The module consists of an NPN transistor with low VCEsat and high current capability, and a planar Schottky barrier diode with an integrated guard ring for stress protection, in a small plastic SMD package.
The Philips PMEM4010ND is a discrete semiconductor module housed in a small plastic SOT457 (SC-74) surface-mount package. It integrates an NPN transistor with low collector-emitter saturation voltage and high current capability, paired with a planar Schottky barrier diode featuring an integrated guard ring for stress protection.
This device is designed to reduce PCB area and pick-and-place costs while providing robust performance in various applications. Key features include a total power dissipation of 600 mW, support for peak collector currents up to 2 A, and ultra-high-speed switching capabilities.
| Total power dissipation | 600 mW |
|---|---|
| Collector current (DC) | 1 A |
| Peak collector current | 2 A |
| Collector-base voltage | -40 V |
| Continuous reverse voltage (Diode) | -20 V |
It is suitable for DC/DC converters, inductive load drivers, general purpose load drivers, and reverse polarity protection circuits.
The maximum junction temperature (Tj) for the NPN transistor is 150 °C.
The DC current gain ranges from a minimum of 300 to a maximum of 900 under specified conditions.