This document introduces a new generation of TRENCH MOSFETs, which combines the benefits of low on-resistance with fast switching speed. They are ideal for high efficiency, low voltage, power management applications.
This document is a provisional datasheet for the ZXMN10B08E6, a 100V N-Channel Enhancement Mode MOSFET designed for high-efficiency power management applications. The device features a TRENCH MOSFET structure with low on-resistance and fast switching speed, available in the SOT23-6 package.
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Ta=25°C) | 1.9 A |
| Power Dissipation (Ta=25°C) | 11 W |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | SOT23-6 |
| Static Drain-Source On-State Resistance | 0.230 Ohm |
The maximum drain-source voltage is 100V.
The continuous drain current is 1.9A when Vgs=10V and Ta=25°C.
The operating and storage temperature range is -55 to +150 °C.