This document describes a new generation of Trench MOSFETs from Zetex, which combines the benefits of low on-resistance with fast switching speed. These products are ideal for high efficiency, low voltage power management applications.
This document is a datasheet for the Zetex ZXMN2A14F, a 20V N-Channel Enhancement Mode MOSFET. It describes the device as a Trench MOSFET designed for high efficiency and low voltage power management applications, featuring low on-resistance and fast switching speed. The device is available in an SOT23 package.
| Drain-Source Voltage | 20 V |
|---|---|
| Continuous Drain Current | 4 A |
| Power Dissipation | 1 W |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | SOT23 |
| Static Drain-Source On-State Resistance | 0.060 Ohm |
The maximum junction temperature is 150 °C.
The typical static drain-source on-state resistance is 0.060 Ohm.