Key facts
- Brand
- Zetex
- Model
- ZXMN10B08E6
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-02
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Zetex ZXMN10B08E6 100V N-Channel Enhancement Mode MOSFET Datasheet
This document is a provisional datasheet for the ZXMN10B08E6, a 100V N-Channel Enhancement Mode MOSFET designed for high-efficiency power management applications. The device features a TRENCH MOSFET structure with low on-resistance and fast switching speed, available in the SOT23-6 package.
Read onlineZetex ZXMN10B08E6 specifications
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Ta=25°C) | 1.9 A |
| Power Dissipation (Ta=25°C) | 11 W |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | SOT23-6 |
| Static Drain-Source On-State Resistance | 0.230 Ohm |
Source: Zetex ZXMN10B08E6 100V N-Channel Enhancement Mode MOSFET Datasheet
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain-source voltage?
The maximum drain-source voltage is 100V.
From: Zetex ZXMN10B08E6 100V N-Channel Enhancement Mode MOSFET Datasheet
What is the continuous drain current at 25°C?
The continuous drain current is 1.9A when Vgs=10V and Ta=25°C.
From: Zetex ZXMN10B08E6 100V N-Channel Enhancement Mode MOSFET Datasheet
What is the maximum drain‑source voltage for the ZXMN10B08E6?
The device is rated for a maximum drain‑source voltage of 100 V.
What is the typical on‑resistance of this MOSFET?
The typical on‑resistance is 0.230 Ω.